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Arabpour A. Plasma-Assisted Synthesis of Aluminum Nitride (AlN), a Modern and Novel Approach. sjfst 2025; 7 (4) :1-8
URL: http://sjfst.srpub.org/article-6-271-en.html
URL: http://sjfst.srpub.org/article-6-271-en.html
ICT Research Institute (Iran Telecom Research Center), Tehran, Iran. , Amirhoseinarabpour.en@yahoo.com
Abstract: (4 Views)
The importance of producing high-purity, fine-sized materials in the industry cannot be overstated, given their superior properties and performance across various applications. Aluminum nitride (AlN) is one such material that has garnered significant attention. Known for its exceptional thermal conductivity, electrical insulation, mechanical strength, and chemical stability, AlN plays a crucial role in high-tech applications such as electronics, heat sinks, optoelectronics, and semiconductors. Its thermal conductivity is essential for efficient heat dissipation in electronic devices, while its electrical insulation and low thermal expansion coefficient make it ideal for use in semiconductor applications. Among the numerous production methods available, plasma-assisted synthesis stands out as a novel and promising technique. This method leverages plasma technology to generate reactive nitrogen species and high-energy environments, facilitating the formation of AlN. Plasma-assisted synthesis is highly efficient, enabling the production of AlN at lower temperatures while maintaining fine grain size and high purity. The enhanced reaction kinetics, reduced energy consumption, and superior product quality associated with this technique make it a forward-thinking approach in advanced material synthesis.
Keywords: Aluminum Nitride (AlN), Plasma-Assisted Synthesis, Thermal Conductivity, Advanced Materials, Semiconductors.
Type of Study: Review |
Subject:
Materials Science (General)
Received: 2025/09/22 | Revised: 2025/10/26 | Accepted: 2025/11/19 | Published: 2025/12/25
Received: 2025/09/22 | Revised: 2025/10/26 | Accepted: 2025/11/19 | Published: 2025/12/25
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